ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,790, issued on Nov. 3, was assigned to Intel NDTM US LLC (Santa Clara, Calif.). "Word line voltage detection circuit for enhanced read opera... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,791, issued on Nov. 3, was assigned to STMicroelectronics International N.V. (Geneva). "SRAM with fast, controlled peak current, power effic... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,792, issued on Nov. 3, was assigned to STMicroelectronics International N.V. (Geneva). "SRAM with fast, controlled peak current, power effic... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,793, issued on Nov. 3, was assigned to Magtera Inc. (Walnut Creek, Calif.). "Magnetic memory based on tunable Ruderman-Kittel-Kasuya-Yosida ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,794, issued on Nov. 3, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Layout pattern of magnetoresistive random acc... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,795, issued on Nov. 3, was assigned to Kioxia Corp. (Tokyo). "Memory system" was invented by Masahiko Nakayama (Yokohama Kawagawa, Japan) an... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,796, issued on Nov. 3, was assigned to Renesas Electronics Corp. (Tokyo). "Semiconductor device" was invented by Koichi Takeda (Tokyo) and T... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,797, issued on Nov. 3. "Methods and circuits for reading and writing pi-state-induced circulating currents into superconducting circuits con... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,798, issued on Nov. 3, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Magnetoresistive random access memory system ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,799, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Memory device including ferroelectric cell cap... Read More